| PART |
Description |
Maker |
| T2G405528-FS-EVB2 T2G4005528-FS |
55W, 28V DC 3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| T2G6000528-Q3-15 T2G6000528-Q3-EVB5 T2G6000528-Q3- |
10W, 28V DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| T1G6003028-FS T1G6003028-FSEVB1 T1G6003028-FS-15 |
30W, 28V, DC ?6 GHz, GaN RF Power Transistor
30W, 28V, DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| T2G6003028-FS-EVB1 T2G6003028-FS-15 T2G6003028-FS- |
30W, 28V DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| CGH35060F1-AMP |
60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access
|
Cree, Inc
|
| PDM-81M-3.8GSQ |
3300 MHz - 4300 MHz RF/MICROWAVE SPLITTER AND COMBINER, 0.7 dB INSERTION LOSS
|
MERRIMAC INDUSTRIES INC
|
| MA4EX585L-1225T |
5600 MHz - 6000 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 9 dB CONVERSION LOSS-MAX
Silicon Double Balanced HMIC Mixer LO=3300 MHz, RF=5800 MHz
|
MACOM[Tyco Electronics]
|
| AD841KNZ |
OP-AMP, 3300 uV OFFSET-MAX, 40 MHz BAND WIDTH, PDIP14
|
ANALOG DEVICES INC
|
| LF2805A |
RF MOSFET Power Transistor, 5W, 28V 500 - 1000 MHz
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF MOSFET Power Transistor/ 5W/ 28V 500 - 1000 MHz
|
Tyco Electronics
|
| PEH626HAC4390M10 PEH626HBB4390M08 PEH626KBD4390M08 |
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 25 V, 3900 uF, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 40 V, 3900 uF, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 40 V, 3300 uF, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT
|
KEMET, Corp.
|
| CGHV27100 CGHV27100F CGHV27100-TB CGHV27100F-AMP |
100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE
|
Cree, Inc
|
|
